- 您现在的位置：买卖IC网 > Sheet目录511 > SI4933DY-T1-GE3 (Vishay Siliconix)MOSFET P-CH DUAL 12V 8-SOIC
Si4933DY
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
V GS(th)
V DS = V GS , I D = - 500 μA
- 0.40
- 1.0
V
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 12 V, V GS = 0 V
V DS = - 12 V, V GS = 0 V, T J = 55 °C
V DS = - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 9.8 A
- 30
0.0115
± 100
-1
-5
0.014
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 8.9 A
0.014
0.017
Ω
V GS = - 1.8 V, I D = - 5.0 A
0.018
0.022
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 9.8 A
40
S
Diode Forward Voltage
a
V SD
I S = - 1.7 A, V GS = 0 V
- 0.7
- 1.2
V
Dynamic b
Total Gate Charge
Q g
46
70
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Q gs
Q gd
t d(on)
t r
V DS = 6 V, V GS = - 4.5 V, I D = - 9.8 A
V DD = 6 V, R L = 6 Ω
6.0
13
35
47
55
70
nC
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
t d(off)
t f
t rr
I D ? - 1 A, V GEN = - 4.5 V, R g = 6 Ω
I F = - 1.7 A, dI/dt = 100 A/μs
320
260
210
480
390
315
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
24
V GS = 5 V thru 2 V
30
24
18
12
6
1.5 V
18
12
6
T C = 125 ° C
1V
25 ° C
- 55 ° C
0
0
1
2
3
4
5
0
0.0
0.4
0.8
1.2
1.6
2.0
www.vishay.com
2
V DS - Drain-to-Source Voltage (V)
Output Characteristics
V GS - Gate-to-Source Voltage (V)
Transfer Characteristics
Document Number: 71980
S09-0867-Rev. D, 18-May-09
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
SI4936CDY-T1-E3
MOSFET 2N-CH 30V 5.8A SO8
SI4940DY-T1-GE3
MOSFET N-CH DUAL 40V 8-SOIC
SI4943BDY-T1-GE3
MOSFET P-CH D-S 20V 8-SOIC
SI4943CDY-T1-E3
MOSFET P-CH D-S 20V 8-SOIC
SI4946BEY-T1-GE3
MOSFET N-CH D-S 60V 8-SOIC
SI4966DY-T1-GE3
MOSFET 2N-CH 20V 8SOIC
SI4972DY-T1-GE3
MOSFET N-CH DUAL 30V 8-SOIC
SI4973DY-T1-GE3
MOSFET 2P-CH 30V 5.8A 8SOIC
相关代理商/技术参数
SI4936
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:Dual N-Channel Enhancement Mode MOSFET
SI4936ADY
功能描述:MOSFET 30V 5.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4936ADY-E3
功能描述:MOSFET 30V 5.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4936ADY-T1
功能描述:MOSFET 30V 5.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4936ADY-T1-E3
功能描述:MOSFET 30V 5.9A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4936ADY-T1-GE3
功能描述:MOSFET 30V 5.9A 2.0W 36mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4936BDY-T1-E3
功能描述:MOSFET 30 Volt 6.9 Amp 2.8W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4936BDY-T1-E3/BKN
制造商:Vishay Siliconix 功能描述:DUAL N-CHANNEL 30-V(D-S) MOSFE